Chin. J. Semicond. > 1999, Volume 20 > Issue 3 > 246-249
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Y掺杂钛酸钡薄膜的Sol-Gel法制备及PTC效应

龚健 , 符小荣 , 宋世庚 , 谭辉 and 陶明德

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    Received: 20 August 2015 Revised: Online: Published: 01 March 1999

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      Article Navigation >  Journal of Semiconductors  > 1999  >  20(3): 246-249
      龚健, 符小荣, 宋世庚, 谭辉, 陶明德. Y掺杂钛酸钡薄膜的Sol-Gel法制备及PTC效应[J]. 半导体学报(英文版), 1999, 20(3): 246-249.
      Citation:
      龚健, 符小荣, 宋世庚, 谭辉, 陶明德. Y掺杂钛酸钡薄膜的Sol-Gel法制备及PTC效应[J]. 半导体学报(英文版), 1999, 20(3): 246-249.
      shu

      • Received Date: 2015-08-20

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