| Citation: |
Zhang Shujing, Yang Ruixia, Zhang Yuqing, Gao Xuebang, Yang Kewu. Broadband MMIC Power Amplifier for C-X-Ku-Band Applications[J]. Journal of Semiconductors, 2007, 28(6): 829-832.
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Zhang S J, Yang R X, Zhang Y Q, Gao X B, Yang K W. Broadband MMIC Power Amplifier for C-X-Ku-Band Applications[J]. Chin. J. Semicond., 2007, 28(6): 829.
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Broadband MMIC Power Amplifier for C-X-Ku-Band Applications
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Abstract
A three-stage MMIC power amplifier operating from 6 to 18GHz is fabricated using 0.25μm AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor (PHEMT).The amplifier is fully monolithic,with all matching,biasing,and DC block circuitry included on the chip.The power amplifier has an average power gain of 19dB over 6～18GHz.At operation frequencies from 6 to 18GHz,the output power is above 33.3dBm,and the maximum output power of the MMIC is 34.7dBm at 10GHz.The input return loss is less than -10dB and the output return is less than -6dB over operating frequency.This power amplifier has,to our knowledge,the best power gain flatness reported at C-X-Ku-band applications.-
Keywords:
- GaAs,
- PHEMT,
- MMIC,
- power amplifier,
- C-X-Ku broadband
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References
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Proportional views
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