| Citation: |
Feng Zhihong, Yin Jiayun, Yuan Fengpo, Liu Bo, Liang Dong, Mo Jianghui, Zhang Zhiguo, Wang Yong, Feng Zhen, Li Xiaobai, Yang Kewu, Cai Shujun. A 5.1W/mm Power Density GaN HEMT on Si Substrate[J]. Journal of Semiconductors, 2007, 28(12): 1949-1951.
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Feng Z H, Yin J Y, Yuan F P, Liu B, Liang D, Mo J H, Zhang Z G, Wang Y, Feng Z, Li X B, Yang K W, Cai S J. A 5.1W/mm Power Density GaN HEMT on Si Substrate[J]. Chin. J. Semicond., 2007, 28(12): 1949.
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A 5.1W/mm Power Density GaN HEMT on Si Substrate
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Abstract
High quality GaN HEMT materials were grown on Si (111) substrates by MOCVD.The FWHM of the XRD (002) rocking curve of the 1mm-thick GaN epilayer is 573" ,and the (102) is 668" .2μm-thick crack-free GaN HEMT materials were achieved by the interlayer technique.The RT 2DEG mobility is 1350cm2/(V·s) with a sheet resistance of 328Ω/□.The DC and RF characteristics of a GaN microwave power device with a 1mm gate width were probed.The saturated drain current density is around 0.8A/mm,and the peak transconductance is beyond 250mS/mm.Tuning for a maximum output power of 5.1W at 2GHz,a gain of 9.1dB,and a peak power-added efficiency of 35% was obtained.-
Keywords:
- Si substrate,
- GaN HEMT,
- FWHM of XRD,
- 2DEG mobility,
- power density
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References
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Proportional views
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