Chin. J. Semicond. > 2005, Volume 26 > Issue 1 > 209-214
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COF结构中键合力损伤芯片Al层的研究

彭瑶玮, 陈文庆, 王志平 and 肖斐

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Abstract: 运用实验和有限元模拟相结合的方法，研究了非导电膜和金金共金工艺中键合力对芯片Al压焊块内应力分布的影响，并分析了样品的失效部位和失效原因．挠性基板上印制线宽度不同时键合力对芯片损伤情况的研究表明，小印制线宽度在相同单位面积键合力情况下对Al压焊块损伤较轻．讨论了印制线宽度对键合偏移容差的要求．

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    Received: 19 August 2015 Revised: Online: Published: 01 January 2005

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      Article Navigation >  Journal of Semiconductors  > 2005  >  26(1): 209-214
      彭瑶玮, 陈文庆, 王志平, 肖斐. COF结构中键合力损伤芯片Al层的研究[J]. Journal of Semiconductors, 2005, 26(1): 209-214. ****彭瑶玮, 陈文庆, 王志平, 肖斐. 2005: COF结构中键合力损伤芯片Al层的研究. Journal of Semiconductors, 26(1): 209-214.
      Citation:
      彭瑶玮, 陈文庆, 王志平, 肖斐. COF结构中键合力损伤芯片Al层的研究[J]. Journal of Semiconductors, 2005, 26(1): 209-214. ****
      彭瑶玮, 陈文庆, 王志平, 肖斐. 2005: COF结构中键合力损伤芯片Al层的研究. Journal of Semiconductors, 26(1): 209-214.
      shu

      COF结构中键合力损伤芯片Al层的研究

      • Received Date: 2015-08-19

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