Chin. J. Semicond. > 1985, Volume 6 > Issue 4 > 350-354
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采用半导体器件的高压纳秒脉冲电路

李锦林 , 周旋 and 鲍秉乾

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    Received: 20 August 2015 Revised: Online: Published: 01 April 1985

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      Article Navigation >  Journal of Semiconductors  > 1985  >  6(4): 350-354
      李锦林, 周旋, 鲍秉乾. 采用半导体器件的高压纳秒脉冲电路[J]. 半导体学报(英文版), 1985, 6(4): 350-354.
      Citation:
      李锦林, 周旋, 鲍秉乾. 采用半导体器件的高压纳秒脉冲电路[J]. 半导体学报(英文版), 1985, 6(4): 350-354.
      shu

      • Received Date: 2015-08-20

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