Chin. J. Semicond. > 2004, Volume 25 > Issue 8 > 1009-1012
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恒电流应力引起HfO_2栅介质薄膜的击穿特性

韩德栋 , 康晋锋 , 王成钢 , 刘晓彦 , 韩汝琦 and 王玮

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Key words: 恒电流应力, 高k, HfO2, 击穿

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    Received: 19 August 2015 Revised: Online: Published: 01 August 2004

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      Article Navigation >  Journal of Semiconductors  > 2004  >  25(8): 1009-1012
      韩德栋, 康晋锋, 王成钢, 刘晓彦, 韩汝琦, 王玮. 恒电流应力引起HfO_2栅介质薄膜的击穿特性[J]. 半导体学报(英文版), 2004, 25(8): 1009-1012.
      Citation:
      韩德栋, 康晋锋, 王成钢, 刘晓彦, 韩汝琦, 王玮. 恒电流应力引起HfO_2栅介质薄膜的击穿特性[J]. 半导体学报(英文版), 2004, 25(8): 1009-1012.
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      • Received Date: 2015-08-19

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