Chin. J. Semicond. > 1986, Volume 7 > Issue 6 > 631-637
|

CONTENTS

Si_3N_4膜气相淀积的最佳工艺条件的选择和应用

阮传土

+ Author Affiliations

PDF

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2485 Times PDF downloads: 1249 Times Cited by: 0 Times

    History

    Received: 20 August 2015 Revised: Online: Published: 01 June 1986

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 1986  >  7(6): 631-637
      阮传土. Si_3N_4膜气相淀积的最佳工艺条件的选择和应用[J]. 半导体学报(英文版), 1986, 7(6): 631-637.
      Citation:
      阮传土. Si_3N_4膜气相淀积的最佳工艺条件的选择和应用[J]. 半导体学报(英文版), 1986, 7(6): 631-637.
      shu

      • Received Date: 2015-08-20

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return