Chin. J. Semicond. > 1981, Volume 2 > Issue 3 > 169-181

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用深能级瞬态谱及瞬态电容研究靠近禁带中央能级的新方法

秦国刚 , 张玉峰 , 杜永昌 , 吴书祥 , 张丽珠 and 陈开茅

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    Received: 20 August 2015 Revised: Online: Published: 01 March 1981

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      Article Navigation >  Journal of Semiconductors  > 1981  >  2(3): 169-181
      秦国刚, 张玉峰, 杜永昌, 吴书祥, 张丽珠, 陈开茅. 用深能级瞬态谱及瞬态电容研究靠近禁带中央能级的新方法[J]. 半导体学报(英文版), 1981, 2(3): 169-181.
      Citation:
      秦国刚, 张玉峰, 杜永昌, 吴书祥, 张丽珠, 陈开茅. 用深能级瞬态谱及瞬态电容研究靠近禁带中央能级的新方法[J]. 半导体学报(英文版), 1981, 2(3): 169-181.
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      • Received Date: 2015-08-20

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