Chin. J. Semicond. > 2006, Volume 27 > Issue 1 > 96-99
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Photoresponse of ZnO Single Crystal Film

Li Ying, Feng Shiwei, Yang Ji, Zhang Yuezong, Xie Xuesong, Lü Changzhi and Lu Yicheng

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Abstract: The Ohmic contact and photoresponse of a ZnO single crystal film produced by MOCVD are investigated.The electrical and photoresponsive changes in the ZnO film due to the RF sputter deposition of SiO2 (antireflective coating) are also discussed.A nonalloyed Al/Au metallization scheme forms a good Ohmic contact on the n-type ZnO.RF sputter deposition of SiO2 induces defects which behave as carrier traps and prolongs response time.The photoresponse of the ZnO epitaxial film deteriorates with time.

Key words: ZnO single crystal film, MOCVD, photoresponse, AR coating, RF sputter damage

1

Unstrained InAlN/GaN heterostructures grown on sapphire substrates by MOCVD

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Journal of Semiconductors, 2014, 35(11): 113005. doi: 10.1088/1674-4926/35/11/113005
2

A susceptor with a Λ-shaped slot in a vertical MOCVD reactor by induction heating

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Journal of Semiconductors, 2014, 35(9): 092003. doi: 10.1088/1674-4926/35/9/092003
3

Microstructural properties of over-doped GaN-based diluted magnetic semiconductors grown by MOCVD

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Journal of Semiconductors, 2012, 33(7): 073002. doi: 10.1088/1674-4926/33/7/073002
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Finite element analysis of the temperature field in a vertical MOCVD reactor by induction heating

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Studies on the Butt-Joint of a InGaAsP-Waveguide Realized with Metalorganic Vapor Phase Epitaxy

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7

Growth of High-Quality InP-on-GaAs Quasi-Substrates Using Double Low-Temperature Buffers and Strained Layer Surperlattices by MOCVD

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8

Optimization and Analysis of Magnesium Doping in MOCVD Grown p-GaN

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9

Heteroepitaxy of InP/GaAs by MOCVD

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Chinese Journal of Semiconductors , 2007, 28(S1): 190-192.

10

Influence of Wall Properties on Wall Temperature of a Radial Flow MOCVD Reactor with Three Separate Vertical Inlets

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11

Epitaxial Growth of Atomically Flat AlN Layers on Sapphire Substrate by Metal Organic Chemical Vapor Deposition

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12

Wall Temperature Simulation of a Radial Flow MOCVD Reactor with Three-Separate Vertical Inlets

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Chinese Journal of Semiconductors , 2007, 28(1): 127-130.

13

Growth of High AI Content AIGaN Epilayer by MOCVD

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14

Growth and Characterization of m Plane GaN Material by MOCVD

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15

MOCVD Growth of InN Films on Sapphire Substrates

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16

Simulation of the ZnO-MOCVD Horizontal Reactor Geometry

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17

Numerical Simulation of Gas Phase and Surface Reaction for Growth of GaN by MOCVD

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Chinese Journal of Semiconductors , 2007, 28(S1): 245-248.

18

MOCVD-Grown AlGaN/AlN/GaN HEMT Structure with High Mobility GaN Thin Layer as Channel on SiC

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19

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20

High Resistivity GaN Film Grown by MOCVD

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Chinese Journal of Semiconductors , 2005, 26(S1): 91-93.

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    夏日源, 谭春雨, 杨洪, 胡燮荣, 陈立信, 王宜华, 孙秀芳, 郑宗爽, 章其初, 朱沛然, 刘家瑞. ~(19)F~+离子注入Pb_(1-x)Sn_xTe,CdTe和Si材料中氟的深度分布研究[J]. 半导体学报(英文版), 1988, 9(1): 74-81.
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    Received: 20 August 2015 Revised: Online: Published: 01 January 2006

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      Article Navigation >  Journal of Semiconductors  > 2006  >  27(1): 96-99
      夏日源, 谭春雨, 杨洪, 胡燮荣, 陈立信, 王宜华, 孙秀芳, 郑宗爽, 章其初, 朱沛然, 刘家瑞. ~(19)F~+离子注入Pb_(1-x)Sn_xTe,CdTe和Si材料中氟的深度分布研究[J]. 半导体学报(英文版), 1988, 9(1): 74-81.
      Citation:
      Li Ying, Feng Shiwei, Yang Ji, Zhang Yuezong, Xie Xuesong, Lü Changzhi, Lu Yicheng. Photoresponse of ZnO Single Crystal Film[J]. Journal of Semiconductors, 2006, 27(1): 96-99. ****
      Li Y, Feng S W, Yang J, Zhang Y Z, Xie X S, Lü C, Lu Y C. Photoresponse of ZnO Single Crystal Film[J]. Chin. J. Semicond., 2006, 27(1): 96.
      shu

      Photoresponse of ZnO Single Crystal Film

      • School of Electronic Information & Control Engineering,Beijing University of Technology,Beijing 100022,China

      • School of Electronic Information & Control Engineering,Beijing University of Technology,Beijing 100022,China

      • School of Electronic Information & Control Engineering,Beijing University of Technology,Beijing 100022,China

      • School of Electronic Information & Control Engineering,Beijing University of Technology,Beijing 100022,China

      • School of Electronic Information & Control Engineering,Beijing University of Technology,Beijing 100022,China

      • School of Electronic Information & Control Engineering,Beijing University of Technology,Beijing 100022,China

      • Department of Computer and Electrical Engineering,Rutgers University,Piscataway,NJ 08854,USA

      • Received Date: 2015-08-20

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