Chin. J. Semicond. > 2001, Volume 22 > Issue 12 > 1565-1571
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低功耗IGBT(LPL-IGBT)及其仿真

吴郁 , 陆秀洪 , 亢宝位 , 王哲 , 程序 and 高琰

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Key words: PT-IGBT, NPT-IGBT, 通态压降, 关断损耗

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    Received: 20 August 2015 Revised: Online: Published: 01 December 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(12): 1565-1571
      吴郁, 陆秀洪, 亢宝位, 王哲, 程序, 高琰. 低功耗IGBT(LPL-IGBT)及其仿真[J]. 半导体学报(英文版), 2001, 22(12): 1565-1571.
      Citation:
      吴郁, 陆秀洪, 亢宝位, 王哲, 程序, 高琰. 低功耗IGBT(LPL-IGBT)及其仿真[J]. 半导体学报(英文版), 2001, 22(12): 1565-1571.
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      • Received Date: 2015-08-20

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