Chin. J. Semicond. > 1985, Volume 6 > Issue 4 > 423-428
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反应离子束刻蚀二氧化硅和硅研究

傅新定 , 陈国明 , 任琮欣 , 郑廷芳 , 陈莉芝 , 方红丽 and 杨洁

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    Received: 20 August 2015 Revised: Online: Published: 01 April 1985

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      Article Navigation >  Journal of Semiconductors  > 1985  >  6(4): 423-428
      傅新定, 陈国明, 任琮欣, 郑廷芳, 陈莉芝, 方红丽, 杨洁. 反应离子束刻蚀二氧化硅和硅研究[J]. 半导体学报(英文版), 1985, 6(4): 423-428.
      Citation:
      傅新定, 陈国明, 任琮欣, 郑廷芳, 陈莉芝, 方红丽, 杨洁. 反应离子束刻蚀二氧化硅和硅研究[J]. 半导体学报(英文版), 1985, 6(4): 423-428.
      shu

      • Received Date: 2015-08-20

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