| Citation: |
He Lijun, Cheng Xingkui, Li Hua, Zhang Jian, Zhou Junming, Huang Qi. Calculation of Microband Breadth of GaAs/AlGaAs Superlattice[J]. Journal of Semiconductors, 2006, 27(1): 59-62.
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He L J, Cheng X K, Li H, Zhang J, Zhou J M, Huang Q. Calculation of Microband Breadth of GaAs/AlGaAs Superlattice[J]. Chin. J. Semicond., 2006, 27(1): 59.
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Calculation of Microband Breadth of GaAs/AlGaAs Superlattice
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Abstract
GaAs/AlGaAs superlattices are grown by molecular beam epitaxy(MBE), and their photocurrent are measured at low temperature (T=77K) .From the view of electron wave mechanics,taking into account the electron wave reflections at the interface between the well and the potential barrier layer, we discuss the electronic states above the barriers in a GaAs/AlGaAs superlattice.This paper presents a new method on calculating the breadth of the microband,and the calculated microband breadth of GaAs/AlGaAs superlattice is in good agreement with the experimental results.-
Keywords:
- superlattice,
- electron states,
- microband breadth,
- calculation method
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References
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Proportional views
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