Chin. J. Semicond. > 1991, Volume 12 > Issue 2 > 114-119
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TiSi_x/GaAs肖特基接触的退火特性

钱鹤 and 罗晋生

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    Received: 19 August 2015 Revised: Online: Published: 01 February 1991

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      Article Navigation >  Journal of Semiconductors  > 1991  >  12(2): 114-119
      钱鹤, 罗晋生. TiSi_x/GaAs肖特基接触的退火特性[J]. 半导体学报(英文版), 1991, 12(2): 114-119.
      Citation:
      钱鹤, 罗晋生. TiSi_x/GaAs肖特基接触的退火特性[J]. 半导体学报(英文版), 1991, 12(2): 114-119.
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      • Received Date: 2015-08-19

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