Citation: |
Wu Ahui. 30GHz PHEMT Oscillator[J]. Journal of Semiconductors, 2005, 26(S1): 252-255.
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Wu A H. 30GHz PHEMT Oscillator[J]. Chin. J. Semicond., 2005, 26(13): 252.
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30GHz PHEMT Oscillator
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Abstract
This paper describes the design, fabrication and performance of a monolithic 30GHz VCO.This MMIC chip utilizes the PHEMT technology.A negative resistance common-source feedback configuration is utilized in the design.The modified-Materka FET model parameters are extracted from the small signal S-parameters and dc I-V parameters.The varactor diode is implemented by common-source-drain-FET.The capacitance is controlled by the gate voltage.The circuit measurements show a frequency tuning bandwidth of about 150MHz at ~30.12GHz center frequency and an output power up to 12.5dBm.The measurements are corresponding with the design.-
Keywords:
- VCO,
- PHEMT,
- MATRK-model,
- harmonic-balance-analysis
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References
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Proportional views