Citation: |
Zeng Yuxin, Liu Wei, Yang Fuhua, Xu Ping, Zhang Hao, Bian Lifeng, Tan Pingheng, Zheng Houzhi, Zeng Yiping. Optical and Electrical Investigation of Embedded Self-Assembled InAs Quantum Dot Modulation Doped Field-Effect-Transistors[J]. Journal of Semiconductors, 2005, 26(S1): 238-242.
****
Zeng Y X, Liu W, Yang F H, Xu P, Zhang H, Bian L F, Tan P H, Zheng H Z, Zeng Y P. Optical and Electrical Investigation of Embedded Self-Assembled InAs Quantum Dot Modulation Doped Field-Effect-Transistors[J]. Chin. J. Semicond., 2005, 26(13): 238.
|
Optical and Electrical Investigation of Embedded Self-Assembled InAs Quantum Dot Modulation Doped Field-Effect-Transistors
-
Abstract
The optical properties of dot-in-a-well(DWELL) self-assembled InAs quantum dots(QDs) are investigated,whose photoluminescence (PL) wavelength reaches around 1.265μm at room temperature.The abnormal red shift of the PL peak of InAs QDs with the increasing of the temperature is closely related with the inhomogeneous size distribution of the QD.A hetero-structure modulation doped field effect transistor (MODFET) with embedded InAs QDs is fabricated,and high electric field I-V characteristics of the device are observed.It is proposed that an MODFET embedded with InAs QDs presents a novel type of field effect photon detector. -
References
-
Proportional views