Chin. J. Semicond. > 1996, Volume 17 > Issue 7 > 493-499
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InGaAs／GaAs应变层量子阱激光器深中心行为

卢励吾，封松林，周洁，杨国文，徐俊英，郭春伟

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    Received: 18 August 2015 Revised: Online: Published: 01 July 1996

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      Article Navigation >  Journal of Semiconductors  > 1996  >  17(7): 493-499
      卢励吾，封松林，周洁，杨国文，徐俊英，郭春伟. InGaAs／GaAs应变层量子阱激光器深中心行为[J]. 半导体学报(英文版), 1996, 17(7): 493-499.
      Citation:
      卢励吾，封松林，周洁，杨国文，徐俊英，郭春伟. InGaAs／GaAs应变层量子阱激光器深中心行为[J]. 半导体学报(英文版), 1996, 17(7): 493-499.
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      • Received Date: 2015-08-18

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