Chin. J. Semicond. > 1994, Volume 15 > Issue 3 > 180-187
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适用于宽温度范围和不同沟遭掺杂浓度的MOSFET反型层载流子迁移率模型

黄骁虎，阮刚

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    Received: 18 August 2015 Revised: Online: Published: 01 March 1994

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      Article Navigation >  Journal of Semiconductors  > 1994  >  15(3): 180-187
      黄骁虎，阮刚. 适用于宽温度范围和不同沟遭掺杂浓度的MOSFET反型层载流子迁移率模型[J]. 半导体学报(英文版), 1994, 15(3): 180-187.
      Citation:
      黄骁虎，阮刚. 适用于宽温度范围和不同沟遭掺杂浓度的MOSFET反型层载流子迁移率模型[J]. 半导体学报(英文版), 1994, 15(3): 180-187.
      shu

      • Received Date: 2015-08-18

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