Chin. J. Semicond. > 1997, Volume 18 > Issue 1 > 4-9
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表面电场导致InGaAs/GaAs量子阱子带跃迁选择定则的改变

王小军 , 刘伟 , 胡雄伟 , 庄婉如 and 王启明

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    Received: 19 August 2015 Revised: Online: Published: 01 January 1997

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      Article Navigation >  Journal of Semiconductors  > 1997  >  18(1): 4-9
      王小军, 刘伟, 胡雄伟, 庄婉如, 王启明. 表面电场导致InGaAs/GaAs量子阱子带跃迁选择定则的改变[J]. 半导体学报(英文版), 1997, 18(1): 4-9.
      Citation:
      王小军, 刘伟, 胡雄伟, 庄婉如, 王启明. 表面电场导致InGaAs/GaAs量子阱子带跃迁选择定则的改变[J]. 半导体学报(英文版), 1997, 18(1): 4-9.
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      • Received Date: 2015-08-19

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