Citation: |
Zhang Shujing, Yang Ruixia, Wu Jibin, Yang Kewu. An X-Band PHEMT MMIC Power Amplifier[J]. Journal of Semiconductors, 2006, 27(10): 1800-1803.
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Zhang S J, Yang R X, Wu J B, Yang K W. An X-Band PHEMT MMIC Power Amplifier[J]. Chin. J. Semicond., 2006, 27(10): 1800.
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An X-Band PHEMT MMIC Power Amplifier
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Abstract
This paper describes the design,fabrication,and performance of an X-band 8 W AlGaAs/InGaAs/GaAs PHEMT MMIC power amplifier.With a two-stage topology design,this amplifier is designed to fully match a 50Ω input and output impedance.The area of chip is 4.5mm×3mm.With 7.5V and 1.5A DC bias conditions,an output power of 8W,power added efficiency of 30%,and power gain of 15dB are achieved.-
Keywords:
- PHEMT,
- X-band,
- MMIC,
- power amplifier
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References
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Proportional views