Chin. J. Semicond. > 2002, Volume 23 > Issue 12 > 1238-1244
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GaN在Si(001)上的ECR等离子体增强MOCVD直接生长研究(英文)

徐茵 , 顾彪 , 秦福文 , 李晓娜 and 王三胜

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Key words: PEMOCVD, GaN/Si(001)界面, 晶相结构

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    Received: 19 August 2015 Revised: Online: Published: 01 December 2002

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      Article Navigation >  Journal of Semiconductors  > 2002  >  23(12): 1238-1244
      徐茵, 顾彪, 秦福文, 李晓娜, 王三胜. GaN在Si(001)上的ECR等离子体增强MOCVD直接生长研究(英文)[J]. 半导体学报(英文版), 2002, 23(12): 1238-1244.
      Citation:
      徐茵, 顾彪, 秦福文, 李晓娜, 王三胜. GaN在Si(001)上的ECR等离子体增强MOCVD直接生长研究(英文)[J]. 半导体学报(英文版), 2002, 23(12): 1238-1244.
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      • Received Date: 2015-08-19

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