Chin. J. Semicond. > 1998, Volume 19 > Issue 2 > 81-91

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半导体Ⅱ-类量子阱中法诺态的结构和自发辐射对无粒子数反转光增益过程的作用

郭长志 , 陈水莲 , 郭九苓 and 王舒民

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    Received: 20 August 2015 Revised: Online: Published: 01 February 1998

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      Article Navigation >  Journal of Semiconductors  > 1998  >  19(2): 81-91
      郭长志, 陈水莲, 郭九苓, 王舒民. 半导体Ⅱ-类量子阱中法诺态的结构和自发辐射对无粒子数反转光增益过程的作用[J]. 半导体学报(英文版), 1998, 19(2): 81-91.
      Citation:
      郭长志, 陈水莲, 郭九苓, 王舒民. 半导体Ⅱ-类量子阱中法诺态的结构和自发辐射对无粒子数反转光增益过程的作用[J]. 半导体学报(英文版), 1998, 19(2): 81-91.
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      • Received Date: 2015-08-20

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