Chin. J. Semicond. > 1989, Volume 10 > Issue 5 > 323-333

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实用于电路模拟的微米级MOSFET开启电压解析模型的研究

刘军 and 徐葭生

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    Received: 19 August 2015 Revised: Online: Published: 01 May 1989

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      Article Navigation >  Journal of Semiconductors  > 1989  >  10(5): 323-333
      刘军, 徐葭生. 实用于电路模拟的微米级MOSFET开启电压解析模型的研究[J]. 半导体学报(英文版), 1989, 10(5): 323-333.
      Citation:
      刘军, 徐葭生. 实用于电路模拟的微米级MOSFET开启电压解析模型的研究[J]. 半导体学报(英文版), 1989, 10(5): 323-333.
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      • Received Date: 2015-08-19

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