| Citation: |
Gao Xin, Sun Guosheng, Li Jinmin, Zhao Wanshun, Wang Lei, Zhang Yongxing, Zeng Yiping. Homoepitaxial Growth and Properties of 4H-SiC by Chemical Vapor Deposition[J]. Journal of Semiconductors, 2005, 26(S1): 70-73.
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Gao X, Sun G S, Li J M, Zhao W S, Wang L, Zhang Y X, Zeng Y P. Homoepitaxial Growth and Properties of 4H-SiC by Chemical Vapor Deposition[J]. Chin. J. Semicond., 2005, 26(13): 70.
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Homoepitaxial Growth and Properties of 4H-SiC by Chemical Vapor Deposition
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Abstract
4H-SiC(0001) epilayers are grown on 8° off-axis 4H-SiC (0001) substrates by an atmosphere pressure chemical vapor deposition system.Hall measurements show that the unintentionally-doped epilayers are n-type conductive.XRD shows that a single peak in all the samples appears at 2θ=35.5° ,indicating single crystal nature of the epilayers.In lowtemperature photoluminescence,the sample grown at lower temperature exhibits a broad peak at 1.8～2.4eV.In room-temperature Raman spectra,the typical 3C-SiC feature peaks are observed in the same sample,indicating the existence of cubic SiC inclusion,which is in accordance with the photoluminescence result. -
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