Investigation of ICP Etching Damage of InAsP/InP Strained Multiple Quantum Wells

Cao Meng; Wu Huizhen; Lao Yanfeng; Huang Zhanchao; Liu Cheng; Zhang Jun; Jiang Shan

State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem andInformation Technology,Chinese Academy of Sciences,Shanghai 200050,China
Graduate School of Chinese Academy of Sciences,Beijing 100039, China
State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem andInformation Technology,Chinese Academy of Sciences,Shanghai 200050,China
State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem andInformation Technology,Chinese Academy of Sciences,Shanghai 200050,China
State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem andInformation Technology,Chinese Academy of Sciences,Shanghai 200050,China
State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem andInformation Technology,Chinese Academy of Sciences,Shanghai 200050,China
Wuhan Research Institute of Posts & Telecommunications,Wuhan 430074,China
Wuhan Research Institute of Posts & Telecommunications,Wuhan 430074,China

Article Navigation > Journal of Semiconductors > 2006 > 27(1): 178-182

Cao Meng, Wu Huizhen, Lao Yanfeng, Huang Zhanchao, Liu Cheng, Zhang Jun, Jiang Shan. Investigation of ICP Etching Damage of InAsP/InP Strained Multiple Quantum Wells[J]. Journal of Semiconductors, 2006, 27(1): 178-182. ****Cao M, Wu H Z, Lao Y F, Huang Z C, Liu C, Zhang J, Jiang S. Investigation of ICP Etching Damage of InAsP/InP Strained Multiple Quantum Wells[J]. Chin. J. Semicond., 2006, 27(1): 178.

Citation:

Cao Meng, Wu Huizhen, Lao Yanfeng, Huang Zhanchao, Liu Cheng, Zhang Jun, Jiang Shan. Investigation of ICP Etching Damage of InAsP/InP Strained Multiple Quantum Wells[J]. Journal of Semiconductors, 2006, 27(1): 178-182. ****

Cao M, Wu H Z, Lao Y F, Huang Z C, Liu C, Zhang J, Jiang S. Investigation of ICP Etching Damage of InAsP/InP Strained Multiple Quantum Wells[J]. Chin. J. Semicond., 2006, 27(1): 178.

Citation:

Cao M, Wu H Z, Lao Y F, Huang Z C, Liu C, Zhang J, Jiang S. Investigation of ICP Etching Damage of InAsP/InP Strained Multiple Quantum Wells[J]. Chin. J. Semicond., 2006, 27(1): 178.

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Investigation of ICP Etching Damage of InAsP/InP Strained Multiple Quantum Wells

State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem andInformation Technology,Chinese Academy of Sciences,Shanghai 200050,China
Graduate School of Chinese Academy of Sciences,Beijing 100039, China
State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem andInformation Technology,Chinese Academy of Sciences,Shanghai 200050,China
State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem andInformation Technology,Chinese Academy of Sciences,Shanghai 200050,China
State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem andInformation Technology,Chinese Academy of Sciences,Shanghai 200050,China
State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem andInformation Technology,Chinese Academy of Sciences,Shanghai 200050,China
Wuhan Research Institute of Posts & Telecommunications,Wuhan 430074,China
Wuhan Research Institute of Posts & Telecommunications,Wuhan 430074,China

Received Date: 2015-08-20

Abstract

Abstract

To investigate the ICP etching damage to InAsP/InP strained multiple quantum wells,specially designed InAsP/InP strained multiple quantum wells (SMQWs) are grown using gas source molecular beam epitaxy and etched by an inductively coupled plasma.The depth of damage in the SMQW structure is about 40nm after etching for 75nm.This is determined by measuring the photo-luminescence spectra of the sample before and after etching.This result is in good agreement with the theoretical damage depth of 43.5nm by M.Rahman’s model.It is found that the defects are mainly caused by ion channeling.
- dry etching,
- strained multiple quantum wells,
- PL spectra,
- damage

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