Chin. J. Semicond. > 2002, Volume 23 > Issue 1 > 49-52
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空间实用背场Si太阳电池和GaAs/Ge太阳电池性能随质子辐照注量变化的比较

王荣 , 周宏余 , 司戈丽 , 姚淑德 , 张新辉 , 郭增良 , 翟佐绪 , 王勇刚 and 朱升云

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Key words: Si太阳电池, GaAs/Ge太阳电池, 质子辐照

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    Received: 19 August 2015 Revised: Online: Published: 01 January 2002

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      Article Navigation >  Journal of Semiconductors  > 2002  >  23(1): 49-52
      王荣, 周宏余, 司戈丽, 姚淑德, 张新辉, 郭增良, 翟佐绪, 王勇刚, 朱升云. 空间实用背场Si太阳电池和GaAs/Ge太阳电池性能随质子辐照注量变化的比较[J]. 半导体学报(英文版), 2002, 23(1): 49-52.
      Citation:
      王荣, 周宏余, 司戈丽, 姚淑德, 张新辉, 郭增良, 翟佐绪, 王勇刚, 朱升云. 空间实用背场Si太阳电池和GaAs/Ge太阳电池性能随质子辐照注量变化的比较[J]. 半导体学报(英文版), 2002, 23(1): 49-52.
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      • Received Date: 2015-08-19

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