Chin. J. Semicond. > 2006, Volume 27 > Issue 9 > 1612-1615

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C-Band 3.5W/mm InGaP/GaAs HBT Power Transistors with >40% Power-Added Efficiency

Shen Huajun, Chen Yanhu, Yan Beiping, 葛霁, Ge Ji, Wang Xiantai and Liu Xinyu

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Abstract: A C-band InGaP/GaAs HBT power transistor with an optimized material structure and device peripheral structure is designed and fabricated by base-emitter metal self-aligning,emitter ballasting,and an electric plated air bridge.The measured BVCBO is greater than 31V and the BVCEO is greater than 21V.At a frequency of 5.4GHz,the saturated CW output power of the fabricated HBT power transistor is more than 1.4W with a maximum power density of 3.5W/mm,and the power added efficiency is greater than 40%.

Key words: InGaP/GaAspowerheterojunction bipolar transistor

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    Received: 18 August 2015 Revised: 21 March 2006 Online: Published: 01 September 2006

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      Shen Huajun, Chen Yanhu, Yan Beiping, 葛霁, Ge Ji, Wang Xiantai, Liu Xinyu. C-Band 3.5W/mm InGaP/GaAs HBT Power Transistors with >40% Power-Added Efficiency[J]. Journal of Semiconductors, 2006, 27(9): 1612-1615. ****Shen H J, Chen Y H, Yan B P, Ge J, Wang X T, Liu X Y. C-Band 3.5W/mm InGaP/GaAs HBT Power Transistors with >40% Power-Added Efficiency[J]. Chin. J. Semicond., 2006, 27(9): 1612.
      Citation:
      Shen Huajun, Chen Yanhu, Yan Beiping, 葛霁, Ge Ji, Wang Xiantai, Liu Xinyu. C-Band 3.5W/mm InGaP/GaAs HBT Power Transistors with >40% Power-Added Efficiency[J]. Journal of Semiconductors, 2006, 27(9): 1612-1615. ****
      Shen H J, Chen Y H, Yan B P, Ge J, Wang X T, Liu X Y. C-Band 3.5W/mm InGaP/GaAs HBT Power Transistors with >40% Power-Added Efficiency[J]. Chin. J. Semicond., 2006, 27(9): 1612.

      C-Band 3.5W/mm InGaP/GaAs HBT Power Transistors with >40% Power-Added Efficiency

      • Received Date: 2015-08-18
      • Accepted Date: 2006-01-19
      • Revised Date: 2006-03-21
      • Published Date: 2006-10-12

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