Chin. J. Semicond. > 2003, Volume 24 > Issue 8 > 837-840
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CdS薄膜的制备及其性能

黎兵 , 冯良桓 , 郑家贵 , 蔡亚平 , 蔡伟 , 李卫 and 武莉莉

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Key words: CdS薄膜, 化学池沉积(CBD)法, 太阳电池

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    Received: 20 August 2015 Revised: Online: Published: 01 August 2003

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      Article Navigation >  Journal of Semiconductors  > 2003  >  24(8): 837-840
      黎兵, 冯良桓, 郑家贵, 蔡亚平, 蔡伟, 李卫, 武莉莉. CdS薄膜的制备及其性能[J]. 半导体学报(英文版), 2003, 24(8): 837-840.
      Citation:
      黎兵, 冯良桓, 郑家贵, 蔡亚平, 蔡伟, 李卫, 武莉莉. CdS薄膜的制备及其性能[J]. 半导体学报(英文版), 2003, 24(8): 837-840.
      shu

      • Received Date: 2015-08-20

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