Chin. J. Semicond. > 1995, Volume 16 > Issue 11 > 862-868
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集电极电流密度和基区渡越时间的解析模型

马平西，张利春，王阳元

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    Received: 19 August 2015 Revised: Online: Published: 01 November 1995

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      Article Navigation >  Journal of Semiconductors  > 1995  >  16(11): 862-868
      马平西，张利春，王阳元. 集电极电流密度和基区渡越时间的解析模型[J]. 半导体学报(英文版), 1995, 16(11): 862-868.
      Citation:
      马平西，张利春，王阳元. 集电极电流密度和基区渡越时间的解析模型[J]. 半导体学报(英文版), 1995, 16(11): 862-868.
      shu

      • Received Date: 2015-08-19

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