Chin. J. Semicond. > 1995, Volume 16 > Issue 2 > 153-157
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用低能离子束淀积技术在硅（111）衬底上生长氧化铈外延薄膜

黄大定，秦复光，姚振钰，刘志凯，任治璋，林兰英，高维滨，任庆余

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    Received: 19 August 2015 Revised: Online: Published: 01 February 1995

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      Article Navigation >  Journal of Semiconductors  > 1995  >  16(2): 153-157
      黄大定，秦复光，姚振钰，刘志凯，任治璋，林兰英，高维滨，任庆余. 用低能离子束淀积技术在硅（111）衬底上生长氧化铈外延薄膜[J]. 半导体学报(英文版), 1995, 16(2): 153-157.
      Citation:
      黄大定，秦复光，姚振钰，刘志凯，任治璋，林兰英，高维滨，任庆余. 用低能离子束淀积技术在硅（111）衬底上生长氧化铈外延薄膜[J]. 半导体学报(英文版), 1995, 16(2): 153-157.
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      • Received Date: 2015-08-19

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