| Citation: |
Wang Xiaoliang, Hu Guoxin, Ma Zhiyong, Xiao Hongling, Wang Cuimei, Luo Weijun, Liu Xinyu, Chen Xiaojuan, Li Jianping, Li Jinmin, Qian He, Wang Zhanguo. MOCVD-Grown AlGaN/AlN/GaN HEMT Structure with High Mobility GaN Thin Layer as Channel on SiC[J]. Journal of Semiconductors, 2006, 27(9): 1521-1525.
****
Wang X L, Hu G X, Ma Z Y, Xiao H L, Wang C M, Luo W J, Liu X Y, Chen X J, Li J P, Li J M, Qian H, Wang Z G. MOCVD-Grown AlGaN/AlN/GaN HEMT Structure with High Mobility GaN Thin Layer as Channel on SiC[J]. Chin. J. Semicond., 2006, 27(9): 1521.
|
MOCVD-Grown AlGaN/AlN/GaN HEMT Structure with High Mobility GaN Thin Layer as Channel on SiC
-
Abstract
AlGaN/AlN/GaN high electron mobility transistor (HEMT) structures with a high-mobility GaN thin layer as a channel are grown on high resistive 6H-SiC substrates by metalorganic chemical vapor deposition.The HEMT structure exhibits a typical two-dimensional electron gas (2DEG) mobility of 1944cm2/(V·s) at room temperature and 11588cm2/(V·s) at 80K with almost equal 2DEG concentrations of about 1.03E13cm-2.High crystal quality of the HEMT structures is confirmed by triple-crystal X-ray diffraction analysis.Atomic force microscopy measurements reveal a smooth AlGaN surface with a root-mean-square roughness of 0.27nm for a scan area of 10μm×10μm.HEMT devices with 0.8μm gate length and 1.2mm gate width are fabricated using the structures.A maximum drain current density of 957mA/mm and an extrinsic transconductance of 267mS/mm are obtained.-
Keywords:
- AlGaN/GaN,
- HEMT,
- MOCVD,
- power device,
- SiC substrates
-
References
-
Proportional views
DownLoad: