Chin. J. Semicond. > 2000, Volume 21 > Issue 3 > 239-244
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UHV/CVD外延生长锗硅碳三元合金中碳的应变缓解效应

叶志镇 , 章国强 , 亓震 , 黄靖云 , 卢焕明 , 赵炳辉 , 汪雷 and 袁骏

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Key words: 超高真空化学气相沉积, 锗硅碳, 应变补偿, 外延

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    Received: 20 August 2015 Revised: Online: Published: 01 March 2000

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      Article Navigation >  Journal of Semiconductors  > 2000  >  21(3): 239-244
      叶志镇, 章国强, 亓震, 黄靖云, 卢焕明, 赵炳辉, 汪雷, 袁骏. UHV/CVD外延生长锗硅碳三元合金中碳的应变缓解效应[J]. 半导体学报(英文版), 2000, 21(3): 239-244.
      Citation:
      叶志镇, 章国强, 亓震, 黄靖云, 卢焕明, 赵炳辉, 汪雷, 袁骏. UHV/CVD外延生长锗硅碳三元合金中碳的应变缓解效应[J]. 半导体学报(英文版), 2000, 21(3): 239-244.
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      • Received Date: 2015-08-20

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