Chin. J. Semicond. > 1986, Volume 7 > Issue 6 > 661-664
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剥层椭偏光谱法测定As~+注入Si的损伤分布

洪英 and 莫党

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    Received: 20 August 2015 Revised: Online: Published: 01 June 1986

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      Article Navigation >  Journal of Semiconductors  > 1986  >  7(6): 661-664
      洪英, 莫党. 剥层椭偏光谱法测定As~+注入Si的损伤分布[J]. 半导体学报(英文版), 1986, 7(6): 661-664.
      Citation:
      洪英, 莫党. 剥层椭偏光谱法测定As~+注入Si的损伤分布[J]. 半导体学报(英文版), 1986, 7(6): 661-664.
      shu

      • Received Date: 2015-08-20

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