Chin. J. Semicond. > 2005, Volume 26 > Issue 7 > 1406-1411
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改性的薄SOS膜CMOS器件辐射加固特性

刘忠立 , 李宁 , 高见头 and 于芳

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Key words: 固相外延, 改性, SOS薄硅膜, CMOS器件

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    Received: 18 August 2015 Revised: Online: Published: 01 July 2005

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      Article Navigation >  Journal of Semiconductors  > 2005  >  26(7): 1406-1411
      刘忠立, 李宁, 高见头, 于芳. 改性的薄SOS膜CMOS器件辐射加固特性[J]. 半导体学报(英文版), 2005, 26(7): 1406-1411.
      Citation:
      刘忠立, 李宁, 高见头, 于芳. 改性的薄SOS膜CMOS器件辐射加固特性[J]. 半导体学报(英文版), 2005, 26(7): 1406-1411.
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      • Received Date: 2015-08-18

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