Chin. J. Semicond. > 1995, Volume 16 > Issue 5 > 395-400

CONTENTS

同步辐射光电子能谱研究室温下Na对InP（100）表面氮化反应的影响

季航，赵特秀，王晓平，吴建新，徐彭寿，陆尔东，许振嘉

+ Author Affiliations

PDF

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2201 Times PDF downloads: 1351 Times Cited by: 0 Times

    History

    Received: 19 August 2015 Revised: Online: Published: 01 May 1995

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 1995  >  16(5): 395-400
      季航，赵特秀，王晓平，吴建新，徐彭寿，陆尔东，许振嘉. 同步辐射光电子能谱研究室温下Na对InP（100）表面氮化反应的影响[J]. 半导体学报(英文版), 1995, 16(5): 395-400.
      Citation:
      季航，赵特秀，王晓平，吴建新，徐彭寿，陆尔东，许振嘉. 同步辐射光电子能谱研究室温下Na对InP（100）表面氮化反应的影响[J]. 半导体学报(英文版), 1995, 16(5): 395-400.
      shu

      • Received Date: 2015-08-19

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return