Chin. J. Semicond. > 1995, Volume 16 > Issue 7 > 528-532
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SiH＿4和GeH＿4生长SiGe合金的CVD反应研究

顾书林，王荣华，张荣，韩平，郑有

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    Received: 19 August 2015 Revised: Online: Published: 01 July 1995

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      Article Navigation >  Journal of Semiconductors  > 1995  >  16(7): 528-532
      顾书林，王荣华，张荣，韩平，郑有. SiH＿4和GeH＿4生长SiGe合金的CVD反应研究[J]. 半导体学报(英文版), 1995, 16(7): 528-532.
      Citation:
      顾书林，王荣华，张荣，韩平，郑有. SiH＿4和GeH＿4生长SiGe合金的CVD反应研究[J]. 半导体学报(英文版), 1995, 16(7): 528-532.
      shu

      • Received Date: 2015-08-19

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