Chin. J. Semicond. > 1998, Volume 19 > Issue 11 > 851-856
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深亚微米PESD MOSFET特性研究及优化设计

孙自敏 , 刘理天 and 李志坚

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    Received: 18 August 2015 Revised: Online: Published: 01 November 1998

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      Article Navigation >  Journal of Semiconductors  > 1998  >  19(11): 851-856
      孙自敏, 刘理天, 李志坚. 深亚微米PESD MOSFET特性研究及优化设计[J]. 半导体学报(英文版), 1998, 19(11): 851-856.
      Citation:
      孙自敏, 刘理天, 李志坚. 深亚微米PESD MOSFET特性研究及优化设计[J]. 半导体学报(英文版), 1998, 19(11): 851-856.
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      • Received Date: 2015-08-18

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