Chin. J. Semicond. > 1998, Volume 19 > Issue 7 > 498-502
|

CONTENTS

GaN压电效应对载流子浓度的影响

张剑平 , 王晓亮 , 孙殿照 , 李晓兵 , 付荣辉 and 孔梅影

+ Author Affiliations

PDF

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2595 Times PDF downloads: 1909 Times Cited by: 0 Times

    History

    Received: 18 August 2015 Revised: Online: Published: 01 July 1998

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 1998  >  19(7): 498-502
      张剑平, 王晓亮, 孙殿照, 李晓兵, 付荣辉, 孔梅影. GaN压电效应对载流子浓度的影响[J]. 半导体学报(英文版), 1998, 19(7): 498-502.
      Citation:
      张剑平, 王晓亮, 孙殿照, 李晓兵, 付荣辉, 孔梅影. GaN压电效应对载流子浓度的影响[J]. 半导体学报(英文版), 1998, 19(7): 498-502.
      shu

      • Received Date: 2015-08-18

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return