| Citation: |
Zhou Shouli, Cui Hailin, Huang Yongqing, Ren Xiaomin. Effects of Bandgap Narrowing Induced by heavy Doping in Abrupt HBTs on Their Currents[J]. Journal of Semiconductors, 2006, 27(1): 110-114.
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Zhou S L, Cui H L, Huang Y Q, Ren X M. Effects of Bandgap Narrowing Induced by heavy Doping in Abrupt HBTs on Their Currents[J]. Chin. J. Semicond., 2006, 27(1): 110.
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Effects of Bandgap Narrowing Induced by heavy Doping in Abrupt HBTs on Their Currents
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Abstract
The bandgap narrowing is distributed between the conduction and valence bands,according to the Jain-Roulston model,and its effects on the currents of abrupt AlGaAs/GaAs HBTs including the self-heating effect,are analyzed.By comparison experimental results with the results of other distribution models of BGN commonly used in commercial software,it can be concluded that using an accurate dopant-dependent BGN distribution model between bands is very important.-
Keywords:
- HBT,
- heavy doping effects,
- bandgap narrowing,
- Jain-Roulston model
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References
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Proportional views
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