Chin. J. Semicond. > 2000, Volume 21 > Issue 3 > 219-224
|

CONTENTS

Characterization of Ga N_x As_(1 - x) Alloy Grown on GaAs by Molecular Beam Epitaxy

李联合 , 张伟 , 潘钟 , 林耀望 and 吴荣汉

+ Author Affiliations

PDF

Key words: GaAs

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2707 Times PDF downloads: 847 Times Cited by: 0 Times

    History

    Received: 20 August 2015 Revised: Online: Published: 01 March 2000

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 2000  >  21(3): 219-224
      李联合, 张伟, 潘钟, 林耀望, 吴荣汉. Characterization of Ga N_x As_(1 - x) Alloy Grown on GaAs by Molecular Beam Epitaxy[J]. 半导体学报(英文版), 2000, 21(3): 219-224.
      Citation:
      李联合, 张伟, 潘钟, 林耀望, 吴荣汉. Characterization of Ga N_x As_(1 - x) Alloy Grown on GaAs by Molecular Beam Epitaxy[J]. 半导体学报(英文版), 2000, 21(3): 219-224.
      shu

      • Received Date: 2015-08-20

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return