| Citation: |
Wang Lili, Zhang Shuming, Yang Hui, Liang Junwu. Optical and Electrical Properties of GaN:Mg Grown by MOCVD[J]. Journal of Semiconductors, 2008, 29(1): 29-32.
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Wang L L, Zhang S M, Yang H, Liang J W. Optical and Electrical Properties of GaN:Mg Grown by MOCVD[J]. J. Semicond., 2008, 29(1): 29.
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Optical and Electrical Properties of GaN:Mg Grown by MOCVD
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Abstract
Mg-doped GaN layers prepared by metalorganic chemical vapor deposition were annealed at temperatures between 550 and 950℃.Room temperature (RT) Hall and photoluminescence (PL) spectroscopy measurements were performed on the as-grown and annealed samples.After annealing at 850℃,a high hole concentration of 8e17cm-3 and a resistivity of 0.8Ω·cm are obtained.Two dominant defect-related PL emission bands in GaN:Mg are investigated;the blue band is centered at 2.8eV (BL) and the ultraviolet emission band is around 3.27eV (UVL).The relative intensity of BL to UVL increases after annealing at 550℃,but decreases when the annealing temperature is raised from 650 to 850℃,and finally increases sharply when the annealing temperature is raised to 950℃.The hole concentration increases with increased Mg doping,and decreases for higher Mg doping concentrations.These results indicate that the difficulties in achieving high hole concentration of 1e18cm-3 appear to be related not only to hydrogen passivation,but also to self-compensation.-
Keywords:
- Hall effect,
- photoluminescence,
- p-GaN
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References
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Proportional views
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