Epitaxial Lateral Overgrowth of High Quality GaN by MOCVD

Chen Jun; Zhang Jicai; Zhang Shuming; Zhu Jianjun; Yang Hui

Chin. J. Semicond. > 2005, Volume 26 > Issue S1 > 106-108

CONTENTS

Epitaxial Lateral Overgrowth of High Quality GaN by MOCVD

Chen Jun, Zhang Jicai, Zhang Shuming, Zhu Jianjun and Yang Hui

+ Author Affiliations

Abstract: High quality of GaN epilayers are obtained by epitaxial lateral overgrowth (ELOG) in a metalorganic chemical vapor deposition on GaN/sapphire composite substrate.The ELOG sample is characterized by scanning electron microscope (SEM),double-crystal X-ray diffraction,and transmission electron microscope (TEM).It is found that the coalescenced GaN layer exhibits smooth surface and the crystalline quality is greatly improved with respect to that of GaN template.TEM results indicate that all the threading dislocations under the mask have been blocked,and most of the threading dislocations within window region have been directed away from along c axis.

Key words: GaN, epitaxial lateral overgrowth, threading dislocation

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2	Surface morphology of [11-20] a-plane GaN growth by MOCVD on [1-102] r-plane sapphire Xu Shengrui, Hao Yue, Duan Huantao, Zhang Jincheng, Zhang Jinfeng, et al. Journal of Semiconductors, 2009, 30(4): 043003. doi: 10.1088/1674-4926/30/4/043003
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19	Growth of GaN on γ-Al2O3/Si(001) Composite Substrates Liu Zhe, Wang Junxi, Li Jinmin, Liu Hongxin, Wang Qiyuan, et al. Chinese Journal of Semiconductors , 2005, 26(12): 2378-2384.
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Received: 19 August 2015 Revised: Online: Published: 01 December 2005

High quality of GaN epilayers are obtained by epitaxial lateral overgrowth (ELOG) in a metalorganic chemical vapor deposition on GaN/sapphire composite substrate.The ELOG sample is characterized by scanning electron microscope (SEM),double-crystal X-ray diffraction,and transmission electron microscope (TEM).It is found that the coalescenced GaN layer exhibits smooth surface and the crystalline quality is greatly improved with respect to that of GaN template.TEM results indicate that all the threading dislocations under the mask have been blocked,and most of the threading dislocations within window region have been directed away from along c axis.

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