Citation: |
Chen Jun, Zhang Jicai, Zhang Shuming, Zhu Jianjun, Yang Hui. Epitaxial Lateral Overgrowth of High Quality GaN by MOCVD[J]. Journal of Semiconductors, 2005, 26(S1): 106-108.
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Chen J, Zhang J C, Zhang S M, Zhu J J, Yang H. Epitaxial Lateral Overgrowth of High Quality GaN by MOCVD[J]. Chin. J. Semicond., 2005, 26(13): 106.
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Epitaxial Lateral Overgrowth of High Quality GaN by MOCVD
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Abstract
High quality of GaN epilayers are obtained by epitaxial lateral overgrowth (ELOG) in a metalorganic chemical vapor deposition on GaN/sapphire composite substrate.The ELOG sample is characterized by scanning electron microscope (SEM),double-crystal X-ray diffraction,and transmission electron microscope (TEM).It is found that the coalescenced GaN layer exhibits smooth surface and the crystalline quality is greatly improved with respect to that of GaN template.TEM results indicate that all the threading dislocations under the mask have been blocked,and most of the threading dislocations within window region have been directed away from along c axis.-
Keywords:
- GaN,
- epitaxial lateral overgrowth,
- threading dislocation
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References
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Proportional views