Abstract: Hole mobility in strained silicon pMOS inversion layers is investigated theoretically.Using a six-band stress-dependent k·p model,the subband structures of 2DHG in inversion layers are computed from a self-consistent solution to the one-dimensional Schrdinger and Poisson equations.The hole mobility dependence on the transverse electric field for both uniaxial compression and biaxial tension is studied with the Monte Carlo method and compared with the case of unstrained silicon.The simulation results show that both uniaxial compression and biaxial tension can enhance the hole mobility.Uniaxial compression along the [110] direction enhances the hole mobility much more than in any other crystalline orientation.

Key words: strained silicon, mobility, k·p method, Monte Carlo simulation