Chin. J. Semicond. > 1983, Volume 4 > Issue 6 > 560-564
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半绝缘InP注硅的无包封退火

乔墉 , 卢建国 , 罗潮渭 , 邵永富 and 王渭源

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    Received: 20 August 2015 Revised: Online: Published: 01 June 1983

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      Article Navigation >  Journal of Semiconductors  > 1983  >  4(6): 560-564
      乔墉, 卢建国, 罗潮渭, 邵永富, 王渭源. 半绝缘InP注硅的无包封退火[J]. 半导体学报(英文版), 1983, 4(6): 560-564.
      Citation:
      乔墉, 卢建国, 罗潮渭, 邵永富, 王渭源. 半绝缘InP注硅的无包封退火[J]. 半导体学报(英文版), 1983, 4(6): 560-564.
      shu

      • Received Date: 2015-08-20

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