Chin. J. Semicond. > 2002, Volume 23 > Issue 1 > 21-25
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光伏法研究硅单晶表面态真空敏感机理

颜永美 , 孙宜阳 , 丁小勇 and 周海文

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Key words: 半导体表面态, 真空敏感机理, 光伏方法

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    Received: 19 August 2015 Revised: Online: Published: 01 January 2002

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      Article Navigation >  Journal of Semiconductors  > 2002  >  23(1): 21-25
      颜永美, 孙宜阳, 丁小勇, 周海文. 光伏法研究硅单晶表面态真空敏感机理[J]. 半导体学报(英文版), 2002, 23(1): 21-25.
      Citation:
      颜永美, 孙宜阳, 丁小勇, 周海文. 光伏法研究硅单晶表面态真空敏感机理[J]. 半导体学报(英文版), 2002, 23(1): 21-25.
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      • Received Date: 2015-08-19

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