| Citation: |
Gao Song, Lu Wu, Ren Diyuan, 牛振红, Niu Zhenhong. Time Dependence of Radiation Damage in Bipolar Operational Amplifiers[J]. Journal of Semiconductors, 2006, 27(7): 1280-1284.
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Gao S, Lu W, Ren D Y, Niu Z H. Time Dependence of Radiation Damage in Bipolar Operational Amplifiers[J]. Chin. J. Semicond., 2006, 27(7): 1280.
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Time Dependence of Radiation Damage in Bipolar Operational Amplifiers
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Abstract
The time dependence of radiation damage in bipolar op-amps is studied through a series of radiation experiments.The results show that radiation damage in bipolar op-amps is closely related to time,and we can evaluate low-dose rate radiation damage in devices by adjusting radiating the dose rate,annealing temperature,and annealing time parameters to experiment on circulating radiation-anneal.From the interface states point of view,the possible mechanisms of radiation damage are also analyzed. -
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