Chin. J. Semicond. > 2001, Volume 22 > Issue 12 > 1577-1580
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FN应力下超薄栅N-MOSFET失效的统计特征及寿命预测

穆甫臣 , 许铭真 , 谭长华 and 段小蓉

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Key words: 可靠性, 超薄栅MOSFET, Weibull分布

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    Received: 20 August 2015 Revised: Online: Published: 01 December 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(12): 1577-1580
      穆甫臣, 许铭真, 谭长华, 段小蓉. FN应力下超薄栅N-MOSFET失效的统计特征及寿命预测[J]. 半导体学报(英文版), 2001, 22(12): 1577-1580.
      Citation:
      穆甫臣, 许铭真, 谭长华, 段小蓉. FN应力下超薄栅N-MOSFET失效的统计特征及寿命预测[J]. 半导体学报(英文版), 2001, 22(12): 1577-1580.
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      • Received Date: 2015-08-20

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