| Citation: |
Cao Yulian, Lian Peng, Wang Qing, Wu Xuming, He Guorong, Cao Qing, Song Guofeng, Chen Lianghui. 780nm InGaAsP/InGaP/AlGaAs High Power Semiconductor Laser[J]. Journal of Semiconductors, 2006, 27(9): 1621-1624.
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Cao Y L, Lian P, Wang Q, Wu X M, He G R, Cao Q, Song G F, Chen L H. 780nm InGaAsP/InGaP/AlGaAs High Power Semiconductor Laser[J]. Chin. J. Semicond., 2006, 27(9): 1621.
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780nm InGaAsP/InGaP/AlGaAs High Power Semiconductor Laser
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Abstract
Using metal organic chemical vapor deposition,we fabricate an InGaAsP/InGaP/AlGaAs single quantum well laser with a separate confinement heterostructure.We calculate the gain spectrum with and without the effect of interband relaxation.The peak wavelength of the PL spectrum is 764nm.Due to the In carry-over effect,the interface between InGaP and AlGaAs is not abrupt.The performance of the laser diodes into which a thin GaAsP interlayer is inserted is better than those with no such interlayer.The threshold current is decreased from 560 to 450mA,the slope efficiency is increased from 0.61 to 0.7W/A,and the output power is increased from 370 to 940mW.-
Keywords:
- InGaP/AlGaAs,
- interface,
- gain threshold current,
- laser,
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References
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Proportional views
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