Chin. J. Semicond. > 2003, Volume 24 > Issue 11 > 1222-1225
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适用于阵列波导光栅制作的厚SiO_2陡直刻蚀技术

魏珂 , 刘训春 , 曹振亚 , 王润梅 , 罗明雄 and 牛立华

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Key words: 阵列波导光栅(AWG), SiO2, 感应耦合等离子体刻蚀(ICP)

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    Received: 20 August 2015 Revised: Online: Published: 01 November 2003

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      Article Navigation >  Journal of Semiconductors  > 2003  >  24(11): 1222-1225
      魏珂, 刘训春, 曹振亚, 王润梅, 罗明雄, 牛立华. 适用于阵列波导光栅制作的厚SiO_2陡直刻蚀技术[J]. 半导体学报(英文版), 2003, 24(11): 1222-1225.
      Citation:
      魏珂, 刘训春, 曹振亚, 王润梅, 罗明雄, 牛立华. 适用于阵列波导光栅制作的厚SiO_2陡直刻蚀技术[J]. 半导体学报(英文版), 2003, 24(11): 1222-1225.
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      • Received Date: 2015-08-20

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