Chin. J. Semicond. > 1995, Volume 16 > Issue 11 > 831-834
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GaN的MOCVD生长

陆大成，汪度，王晓晖，董建荣，刘祥林，高维滨，李成基，李蕴言

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    Received: 19 August 2015 Revised: Online: Published: 01 November 1995

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      Article Navigation >  Journal of Semiconductors  > 1995  >  16(11): 831-834
      陆大成，汪度，王晓晖，董建荣，刘祥林，高维滨，李成基，李蕴言. GaN的MOCVD生长[J]. 半导体学报(英文版), 1995, 16(11): 831-834.
      Citation:
      陆大成，汪度，王晓晖，董建荣，刘祥林，高维滨，李成基，李蕴言. GaN的MOCVD生长[J]. 半导体学报(英文版), 1995, 16(11): 831-834.
      shu

      • Received Date: 2015-08-19

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