Chin. J. Semicond. > 1998, Volume 19 > Issue 1 > 38-42

CONTENTS

单场限环结构击穿电压的表面电荷效应分析

唐本奇 , 高玉民 and 罗晋生

PDF

  • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2586 Times PDF downloads: 1722 Times Cited by: 0 Times

    History

    Received: 20 August 2015 Revised: Online: Published: 01 January 1998

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      唐本奇, 高玉民, 罗晋生. 单场限环结构击穿电压的表面电荷效应分析[J]. 半导体学报(英文版), 1998, 19(1): 38-42.
      Citation:
      唐本奇, 高玉民, 罗晋生. 单场限环结构击穿电压的表面电荷效应分析[J]. 半导体学报(英文版), 1998, 19(1): 38-42.

      • Received Date: 2015-08-20

      Catalog

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return